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complementary metal oxide semiconductor

英 [ˌkɒmplɪˈmentri ˈmetl ˈɒksaɪd ˌsemikənˈdʌktə(r)] 美 [ˌkɑːmplɪˈmentri ˈmetl ˈɑːksaɪd ˈsemikəndʌktər]
计算机
complementary metal oxide semiconductor
网络  互补金属氧化物半导体; 互补型金属氧化物半导体; 互补性氧化金属半导体; 补充金属氧化物半导体; 半导体

  1. To boot an operating system, the BIOS runtime searches for devices that are both active and bootable in the order of preference defined by the complementary metal oxide semiconductor ( CMOS) settings.
    要引导一个操作系统，BIOS运行时会按照CMOS的设置定义的顺序来搜索处于活动状态并且可以引导的设备。
  2. Complementary metal oxide semiconductor device
    互补金属氧化物半导体器件
  3. The entire process of building a sound chip is fully compatible with the standard industry process for semiconductor manufacturing, called complementary metal oxide semiconductor, or CMOS.
    声音晶片的全部制程，是完全相容于互补式金属氧化物半导体（cmos）的工业标准制程。
  4. 1/ f optimization of a complementary metal oxide semiconductor focal plane array input circuit
    互补金属氧化物半导体焦平面阵列输入电路1/f噪声的优选
  5. A complementary metal oxide semiconductor ( CMOS) readout integrated circuit ( ROIC) for the sensitive material of vanadium dioxide ( VO_2) was introduced.
    介绍了一种针对二氧化钒敏感材料的CMOS读出电路（ROIC）。
  6. The chip was fabricated in standard digital complementary metal-oxide-semiconductor process.
    该模数转换器已在标准数字互补性金属氧化物半导体工艺下实现。
  7. A development of infrared focal plane array ( IRFPA) complementary metal oxide semiconductor ( CMOS) readout integrated circuit ( ROIC) is introduced. The circuit principle of ROIC, time sequence of multiplexer, circuit parameter, layout design and technology analysis are described.
    介绍了一种红外焦平面阵列（IRFPA）互补金属氧化物半导体（CMOS）读出集成电路（ROIC）的研制方案，叙述了读出电路的电路原理及工作时序、电路参数设计、版图设计及工艺分析。
  8. Since the switched current technology is employed, this system is fully compatible with a standard digital Complementary metal oxide semiconductor ( CMOS) technology, and is easily to be integrated in mixed analog digital system and implemented in very large scale integrated circuit ( VLSI).
    由于采用开关电流技术，该系统电路可以直接采用标准的数字互补型金属氧化物半导体（CMOS）工艺来实现，便于模、数混合集成，易于超大规模集成电路（VLSI）的制作。
  9. Resistive random access memory ( RRAM) is considered as one of the most promising candidates for the next generation of high-density non-volatile memory, owing to its simple fabricating process and compatibility with complementary metal oxide semiconductor ( CMOS) technology.
    阻变存储器因其结构简单，易于集成，与现有CMOS工艺兼容性高，被认为是最具潜力的下一代高密度非易失性存储器之一。